g d s 050-5542 rev b maximum ratings all ratings: t c = 25 c unless otherwise specified. unit volts amps volts watts w/ c c amps mj unit volts amps ohms a na volts min typ max 600 38 0.150 25 250 100 24 apt6015lvr 600 38 152 30 40 520 4.16 -55 to 150 300 3850 2500 apt6015lvr 600v 38a 0.150 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout.. ? faster switching ? 100% avalanche tested ? lower leakage ? popular to-264 package power mos v ? to-264 characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125 c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dssi d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25 c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25 c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. usa 405 s.w. columbia street bend, oregon 97702-1035 phone: (541) 382-8028 fax: (541) 388-0364 europe avenue j.f. kennedy bat b4 parc cadra nord f-33700 merignac - france phone: (33) 5 57 92 15 15 fax: (33) 5 56 47 97 61 apt website - http://www.advancedpower.com downloaded from: http:///
1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25 c, l = 3.46mh, r g = 25 , peak i l = 38a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. dynamic characteristics symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25 c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25 c r g = 0.6 min typ max 7500 9000 900 1260 320 480 315 475 45 70 125 190 15 30 13 26 45 70 51 0 unit pf nc ns apt6015lvr characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time 050-5542 rev b source-drain diode ratings and characteristics unit amps volts ns c min typ max 38 152 1.3 690 15.9 thermal characteristics symbol r jc r ja min typ max 0.24 40 unit c/w characteristicjunction to case junction to ambient z jc , thermal impedance ( c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.30.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 symbol i s i sm v sd t rr q rr characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/ s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/ s) downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature ( c) t j , junction temperature ( c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature ( c) t c , case temperature ( c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 50 100 150 200 250 300 0 4 8 12 16 20 02468 02 04 06 08 01 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 apt6015lvr i d = 0.5 i d [cont.] v gs = 10v 100 8060 40 20 0 1.61.4 1.2 1.0 0.8 1.151.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 100 8060 40 20 0 100 8060 40 20 0 4030 20 10 0 2.52.0 1.5 1.0 0.5 0.0 050-5542 rev b v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ < 0.5 % duty cycle v gs =6v, 7v, 10v & 15v v gs =10v v gs =20v t j = +25 c t j = -55 c t j = +125 c t j = +125 c t j = +25 c t j = -55 c 5.5v 4.5v 5v 4v 5.5v 4.5v 5v 4v v gs =6v, 7v, 10v & 15v normalized to v gs = 10v @ 0.5 i d [cont.] downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 600 .01 .1 1 10 50 0 100 200 300 400 500 600 0 0.4 0.8 1.2 1.6 2.0 apt6015lvr to-264 package outline t c =+25 c t j =+150 c single pulse 200100 5010 51 .5.1 2016 12 84 0 050-5542 rev b operation here limited by r ds (on) t j =+150 c t j =+25 c c rss 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 c oss c iss 30,00010,000 5,0001,000 500100 200 100 5010 51 v ds =300v v ds =480v i d = i d [cont.] 10 s 1ms10ms 100ms dc 100 s v ds =120v downloaded from: http:///
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